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| hexfet power mosfet these n-channel mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. a thermally enhanced large pad leadframe has been incorporated into the standard sot-23 package to produce a hexfet power mosfet with the industry's smallest footprint. this package, dubbed the micro3 ? , is ideal for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro3 allows it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. the thermal resistance and power dissipation are the best available. v dss = 20v r ds(on) = 0.045 ultra low on-resistance n-channel mosfet sot-23 footprint low profile (<1.1mm) available in tape and reel fast switching lead-free rohs compliant, halogen-free micro3 ? d s g 3 1 2 parameter max. units v ds drain- source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 4.5v 4.2 i d @ t a = 70c continuous drain current, v gs @ 4.5v 3.4 a i dm pulsed drain current 33 p d @t a = 25c power dissipation 1.25 p d @t a = 70c power dissipation 0.8 linear derating factor 0.01 w/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c form quantity irlml2502trpbf micro3 ? package type standard pack orderable part number base part number parameter typ. max. units r ja maximum junction-to-ambient 75 100 thermal resistance ! " #$ % ! " #$ % repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) pulse width 300 s; duty cycle & surface mounted on fr-4 board, t ' s d g electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.01 ??? v/c r ds(on) static drain-to-source on-resistance ??? 0.035 0.045 ??? 0.050 0.080 v gs(th) gate threshold voltage 0.60 ??? 1.2 v v gs(th) gate threshold voltage coefficient ??? -3.2 ??? mv/c gfs forward transconductance 5.8 ??? ??? s i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 25 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 q g total gate charge ??? 8.0 12 q gs gate-to-source charge ??? 1.8 2.7 q gd gate-to-drain ("miller") charge ??? 1.7 2.6 t d(on) turn-on delay time ??? 7.5 ??? t r rise time ??? 10 ??? t d(off) turn-off delay time ??? 54 ??? t f fall time ??? 26 ??? c iss input capacitance ??? 740 ??? c oss output capacitance ??? 90 ??? c rss reverse transfer capacitance ??? 66 ??? source-drain rating and characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 16 24 ns q rr reverse recovery charge ??? 8.6 13 nc mosfet symbol na ns a pf nc v ds = 10v v gs = 12v v gs = -12v conditions v gs = 0v, i d = 250ua reference to 25c, i d = 1.0ma v gs = 4.5v, i d = 4.2a ??? ??? 33 ??? ??? 1.3 conditions r d = 10 ? = 1.0mhz t j = 25c, i f = 1.3a di/dt = 100a/ s t j = 25c, i s = 1.3a, v gs = 0v showing the integral reverse p-n junction diode. r g = 6 v ds = 10v, i d = 4.0a v ds = 16v, v gs = 0v, t j = 70c a v gs = 5.0v i d = 1.0a v gs = 0v v ds = 15v i d = 4.0a v ds = v gs , i d = 250 a v gs = 2.5v, i d = 3.6a v ds = 16v, v gs = 0v v dd = 10v ( ! " #$ % fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 4.0a 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 7.00v 5.00v 4.50v 3.50v 3.00v 2.70v 2.50v 2.25v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.25v 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 7.00v 5.00v 4.50v 3.50v 3.00v 2.70v 2.50v 2.25v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.25v 10 100 2.0 2.4 2.8 3.2 3.6 4.0 v = 15v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j ! " #$ % fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.0a v = 10v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 200 400 600 800 1000 1200 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss ' ! " #$ % fig 10. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) ) ! " #$ % fig 12. on-resistance vs. drain current fig 11. on-resistance vs. gate voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs, gate -to -source voltage ( v ) 0.02 0.03 0.04 0.05 r d s ( o n ) , d r a i n - t o - s o u r c e v o l t a g e ( ) id = 4.0a 0 10203040 i d , drain current ( a ) 0.00 0.10 0.20 0.30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) vgs = 4.5v vgs = 2.5v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 0.7 0.9 1.1 1.3 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = 50 a id = 250 a fig 13. threshold voltage vs. temperature * ! " #$ % micro3 (sot-23 / to-236ab) part marking information 0.08 0.88 0.01 0.89 0.95 bs c mil l ime t e r s mi n e e e1 d l a a1 a2 c m o b s y mi n max max .036 .0375 b s c dimens ions inches b0.30 bbb 0.15 .008 ccc .006 0.25 b s c l1 l 0.40 0.60 .0118 b s c aaa 0.20 .004 0 8 8 0 2.80 1.20 0 e1 e d 5 6 3 12 ccc c b a b 5 6 e e1 a2 a a1 bbb c a b 3x b aaa c 3 s urf 0 3x l l1 h 4 7 2.10 e1 1.90 bs c .075 b s c .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236 .0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 1.90 [.075] 0.95 [.0375] 0.972 [.038] 2.742 [.1079] 0.802 [.031] recommended f oot print 3x 3x not es 1. dimens ioning and t ol e rancing pe r as me y14.5m-1994. 4 datum plane h is located at the mold parting line. 5 d at u m a and b t o b e de t e r mi n e d at dat u m p l an e h . 6 d i me ns i on s d and e 1 ar e me as u r e d at dat u m p l ane h . 2. dimensions are shown in millimeters and inches. 3. cont rolling dimension: millimet er. 7 dimension l is the lead length for soldering to a substrate. 8. out line conf orms t o je de c out line t o- 236ab . f = irlml6401 a 2001 a 27 notes: this part marking information applies to devices produced after 02/26/2001 assembly lot code lead-free date code e = irlml6402 x = part number code reference : d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 w = (1-26) if preceded by last digit of calendar year w = (27-52) if preceded by a letter y 8 2008 3 2003 1 2001 year 2002 2 5 2005 2004 4 2007 2006 7 6 2010 0 2009 9 year y c 03 work week 01 02 a w b 04 d 24 26 25 x z y work week w h = irlml5203 g = irlml2502 k h g f e d c b 2006 2003 2002 2005 2004 2008 2007 2010 2009 j y 51 29 28 30 c b d 50 x i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = irlml0100 n = irlml2060 p = irlml9301 r = irlml9303 cu wire halogen free part number 52 z date code example: yww = 432 = df yww = 503 = 5c 2018 2013 2011 2012 2015 2014 2017 2016 2020 2019 2018 2013 2011 2012 2015 2014 2017 2016 2020 2019 w = irfml8244 v = irlml6346 u = irlml6344 t = irlml6246 s = irlml6244 y = irlml2246 x = irlml2244 z = irfml9244 + ! " #$ % ? 2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. , ! " #$ % ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level cons umer (per jedec jesd47f ?? guidelines) moisture sensitivity level micro3 ? (sot-23) ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated data sheet with new ir corporate template. ? updated package outline & part marking on page 7. ? ? added bullet point in the benefits "rohs compliant, halogen -free" on page 1. 4/24/2014 |
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